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| 參數(shù) | 值 |
| EPN | HCCZ120R040H1 |
| Type | SiC MOS |
| BVDSS [V] | 1200.00 |
| VGS[V] | -5.00~20.00 |
| VTH[V] | 1.80~4.50 |
| ID[A] | 36.00 |
| PD(W) | 288.00 |
| RDON Typ *[mohm]@VGS=20V | 80.00 |
| Ciss[pF] | 1410.00 |
| Coss[pF] | 97.00 |
| Crss[pF] | 105.00 |
| Qg(10V)[nC] | 6.70 |
| Package | TO-247-4L |
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Room 1213-1216, Zehua Building, Intersection of Meilong Road and East Ring Road, Longhua New District, Shenzhen
HCCZ120R040H1
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