Search
| MOS class | Battery Cell # | Charge Current (max) | VIN (min) | VIN (max) | MOS | OTG voltage (max) | OTG current (max) | Control Interface | Features | Package |
| HCKD5N65AM2 | Discretes | IGBT + Diode | 650 | 5 | 1.45 | 6.35 | 5 | 1.75 | 5 | 30 |
| HCKD5N65BM2 | Discretes | IGBT + Diode | 650 | 5 | 1.45 | 6.35 | 5 | 1.40 | 5 | 30 |
| HCKW40N65H2 | Discretes | IGBT + Diode | 650 | 40 | 1.45 | 5.65 | 40 | 1.60 | 30 | 80 |
| HCKW60N65BH2A | Discretes | IGBT + Diode | 650 | 60 | 1.65 | 6.05 | 60 | 1.45 | 30 | 80 |
| HCKW60N65CH2A | Discretes | IGBT + Diode | 650 | 60 | 1.80 | 5.45 | 30 | 1.35 | 30 | 80 |
| HCKW75N65BH2 | Discretes | IGBT + Diode | 650 | 75 | 1.80 | 5.6 | 75 | 1.70 | 30 | 80 |
| HCKZ75N65BH2 | Discretes | IGBT + Diode | 650 | 75 | 1.80 | 5.6 | 75 | 1.70 | 30 | 80 |
| HCKW75N65FH2 | Discretes | IGBT + Diode | 650 | 75 | 1.80 | 5.6 | 75 | 1.50 | 30 | 80 |
| HCKW75N65GH2 | Discretes | IGBT + SiC Diode | 650 | 75 | 1.80 | 5.7 | 30 | 1.42 | 30 | 80 |
| HCKZ75N65GH2 | Discretes | IGBT + SiC Diode | 650 | 75 | 1.80 | 5.7 | 30 | 1.42 | 30 | 80 |
| HCKW25N120H2 | Discretes | IGBT + Diode | 1200 | 25 | 2.05 | 5.40 | 15 | 1.55 | 20 | 50 |
| HCKW40N120H1 | Discretes | IGBT + Diode | 1200 | 40 | 1.85 | 5.60 | 20 | 1.65 | 20 | 50 |
86-755-28168222
[email protected]
Room 1213-1216, Zehua Building, Intersection of Meilong Road and East Ring Road, Longhua New District, Shenzhen
